OP750D【PDF 1/2 页】PHOTOTRNS NPN W/RES SIDE LOOK

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Prod uct Bul le tin OP750A

June 1999

NPN Phototransistor with Base-Emitter Resistor

Types OP750A, OP750B, OP750C, OP750D

Features

? Wide receiving angle

? Variety of sensitivity ranges

? Side-looking package for space

limited applications

? Base-emitter resistor provides

ambient light protection

Description

The OP750 series devices consist of an

NPN silicon phototransistor molded in a

clear epoxy package. The wide

receiving angle provides relatively even

reception over a large area. The side-

looking package is designed for easy

PC board mounting of slotted optical

switches or optical interrupt detectors.

Ab so lute Maxi mum Rat ings (T A = 25 o C un less oth er wise noted)

Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA

Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 o C to +100 o C

Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing

iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o C (1)

Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW (2)

NOTES:

(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.

Max. 20 grams force may be applied to leads when soldering.

(2) Derate linearly 1.33 mW/ o C above 25 o C.

(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a

radiometric intensity level which varies less than 10% over the entire lens surface of the

phototransistor being tested.

(4) The knee point irradiance is defined as the irradiance required to increase I C(ON) to 50 μ A.

Typi cal Per form ance Curves

This series is mechanically and

spectrally matched to the OP140 and

Typi cal Spec tral Re sponse

Schematic

OP240 series of infrared emitting

diodes.

The phototransistor has an internal

base-emitter resistor which provides

protection from low level ambient

lighting conditions. This feature is also

useful when the media being detected is

semi-transparent to infrared light in

interruptive applications.

Wave length - nm

Op tek Tech nol ogy, Inc.

1215 W. Crosby Road

Car roll ton, Texas 75006

(972)323- 2200

Fax (972)323-2396

3-42

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